CPC G06F 3/0655 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01)] | 20 Claims |
1. A system comprising:
a memory device; and
a processing device coupled to the memory device, the processing device configured to perform operations comprising:
performing a first read operation on the memory device in accordance with a pass-through voltage setting that defines a pass-through voltage applied to one or more cells of the memory device during read operations, the performing of the first read operation comprising applying the pass-through voltage to all word lines in a page of the memory device;
counting a first number of zero bits read from the page of the memory device based on the first read operation;
comparing the first number of zero bits read from the page of the memory device with a threshold number of failing bits, the threshold number of failing bits being based on a page size of the memory device and an expected failure rate of cells of the memory device; and
based on the first number of zero bits read from the page of the memory device exceeding the threshold number of failing bits, increasing the pass-through voltage applied to one or more cells of the memory device during read operations by adjusting the pass-through voltage setting.
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