US 11,693,327 B2
Apparatus and a method of forming a particle shield
Wen-Hao Cheng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Jul. 21, 2022, as Appl. No. 17/869,920.
Application 17/869,920 is a continuation of application No. 17/505,941, filed on Oct. 20, 2021, granted, now 11,460,787.
Application 17/505,941 is a continuation of application No. 17/034,328, filed on Sep. 28, 2020, granted, now 11,397,385.
Application 17/034,328 is a continuation in part of application No. 16/186,249, filed on Nov. 9, 2018, granted, now 10,788,764, issued on Sep. 29, 2020.
Application 16/186,249 is a continuation in part of application No. 15/718,396, filed on Sep. 28, 2017, granted, now 10,126,666, issued on Nov. 13, 2018.
Application 15/718,396 is a continuation of application No. 15/399,180, filed on Jan. 5, 2017, granted, now 10,168,626, issued on Jan. 1, 2019.
Claims priority of provisional application 63/035,278, filed on Jun. 5, 2020.
Claims priority of provisional application 62/351,764, filed on Jun. 17, 2016.
Prior Publication US 2022/0365451 A1, Nov. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/20 (2006.01); G03F 7/00 (2006.01); H01L 21/67 (2006.01)
CPC G03F 7/70916 (2013.01) [G03F 7/707 (2013.01); G03F 7/70875 (2013.01); H01L 21/67115 (2013.01); H01L 21/67253 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A lithography system, comprising:
a radiation source configured to generate a radiation;
a reticle configured to redirect the radiation;
a first type injection nozzle proximal to the reticle and configured to generate a first particle shield in a propagation path of the radiation; and
a second type injection nozzle proximal to the radiation source and configured to generate a second particle shield in the propagation path of the radiation, wherein the second type injection nozzle and the first type injection nozzle are of different types.