US 11,693,189 B2
Fast optical switch and its applications in optical communication
Mohammad A. Mazed, Chino Hills, CA (US); Rex Wiig, Chino, CA (US); and Angel Martinez, Anaheim, CA (US)
Assigned to Celeris Systems, Inc., Anaheim, CA (US)
Filed by Celeris Systems, Inc., Anaheim, CA (US)
Filed on Jan. 15, 2019, as Appl. No. 16/350,782.
Application 16/350,782 is a continuation in part of application No. 15/932,404, filed on Feb. 26, 2018, granted, now 10,185,202.
Application 15/932,404 is a continuation in part of application No. 15/731,683, filed on Jul. 17, 2017, granted, now 10,009,670, issued on Jun. 26, 2018.
Application 15/731,683 is a continuation in part of application No. 14/756,096, filed on Aug. 1, 2015, granted, now 9,746,746, issued on Aug. 29, 2017.
Claims priority of provisional application 62/498,246, filed on Dec. 20, 2016.
Claims priority of provisional application 61/999,601, filed on Aug. 1, 2014.
Prior Publication US 2022/0163729 A1, May 26, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G02B 6/35 (2006.01); G02B 6/122 (2006.01)
CPC G02B 6/356 (2013.01) [G02B 6/1225 (2013.01)] 2 Claims
OG exemplary drawing
 
1. An optical switch comprising:
a first optical waveguide and a second optical waveguide,
wherein the first optical waveguide is less than 5 microns in horizontal width, wherein the second optical waveguide is less than 5 microns in horizontal width,
wherein a section of the first optical waveguide is substantially parallel within manufacturing tolerance to a section of the second optical waveguide,
wherein the section of the first optical waveguide is optically coupled with an ultra thin-film of a vertical thickness or a vertical depth less than 0.5 microns,
wherein the ultra thin-film comprises: a phase transition material,
wherein the phase transition material on the first optical waveguide is receiving a first stimulant, just to induce insulator-to-metal (IMT) phase transition in the phase transition material on the first optical waveguide,
wherein the said insulator-to-metal (IMT) phase transition is with a change in lattice structure or without a change in lattice structure, and/or,
wherein the section of the second optical waveguide is optically coupled with the ultra thin-film of a vertical thickness or a vertical depth less than 0.5 microns,
wherein the ultra thin-film comprises: the phase transition material,
wherein the phase transition material on the second optical waveguide is receiving a second stimulant, just to induce insulator-to-metal (IMT) phase transition in the phase transition material on the second optical waveguide, and
wherein the said insulator-to-metal (IMT) phase transition is with a change in lattice structure or without a change in lattice structure; and
wherein the optical switch is flip-chip mounted on a nanoscaled fin array and/or a heat dissipating substrate, wherein the nanoscaled fin array comprises an array of nanoscaled metal pillars embedded in a thermally conducting thin-film.