US 11,693,030 B2
Probe device, test device, and test method for semiconductor device
Hyungmin Jin, Suwon-si (KR); Jindo Byun, Suwon-si (KR); Younghoon Son, Yongin-si (KR); Youngdon Choi, Seoul (KR); and Junghwan Choi, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 5, 2021, as Appl. No. 17/308,974.
Claims priority of application No. 10-2020-0122196 (KR), filed on Sep. 22, 2020.
Prior Publication US 2022/0091158 A1, Mar. 24, 2022
Int. Cl. G01R 1/20 (2006.01); G01R 1/067 (2006.01); G01R 31/26 (2020.01)
CPC G01R 1/203 (2013.01) [G01R 1/06766 (2013.01); G01R 31/2601 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A probe device, comprising:
a first receiving terminal configured to receive a multi-level signal having M levels, where M is a natural number greater than 2;
a second receiving terminal configured to receive a reference signal;
a receiving buffer including a first input terminal connected to the first receiving terminal, a second input terminal connected to the second receiving terminal, and an output terminal configured to output the multi-level signal based on signals received from the first input terminal and the second input terminal; and
a resistor circuit comprising a plurality of first resistors connected to the first receiving terminal and a plurality of second resistors connected to the second receiving terminal, and the resistor circuit configured to determine a magnitude of a termination resistance of the first receiving terminal and the second receiving terminal.