US 11,691,243 B2
Method of using polishing pad
ChunHung Chen, Hsinchu (TW); Jung-Yu Li, Hsinchu (TW); Sheng-Chen Wang, Hsinchu (TW); and Shih-Sian Huang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Nov. 19, 2020, as Appl. No. 16/952,901.
Application 16/952,901 is a division of application No. 15/647,444, filed on Jul. 12, 2017, granted, now 10,864,612.
Claims priority of provisional application 62/434,224, filed on Dec. 14, 2016.
Prior Publication US 2021/0069855 A1, Mar. 11, 2021
Int. Cl. B24B 37/24 (2012.01); B24B 37/26 (2012.01); B24B 37/22 (2012.01); B24B 37/10 (2012.01); B24B 37/005 (2012.01); B24B 53/017 (2012.01); B24B 49/12 (2006.01)
CPC B24B 37/26 (2013.01) [B24B 37/005 (2013.01); B24B 37/10 (2013.01); B24B 37/22 (2013.01); B24B 37/24 (2013.01); B24B 49/12 (2013.01); B24B 53/017 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of using a polishing pad, the method comprising:
applying a slurry to a first location on the polishing pad;
rotating the polishing pad;
spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region comprises a plurality of first grooves, a first material property of the first region varies in a thickness direction of the polishing pad, each of the plurality of first grooves extends through at least two variations in the first material property, and the first material property comprises porosity, specific gravity or absorbance; and
spreading the slurry across a second region of the polishing pad at a second rate different from the first rate, wherein the second region comprises a plurality of second grooves.