US 11,691,187 B2
Method for cleaning substrate
Hao-Ming Chang, Pingtung (TW); and Chia-Shih Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 27, 2022, as Appl. No. 17/815,243.
Application 17/815,243 is a continuation of application No. 16/828,743, filed on Mar. 24, 2020, granted, now 11,440,060.
Claims priority of provisional application 62/907,510, filed on Sep. 27, 2019.
Prior Publication US 2022/0362814 A1, Nov. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); B08B 3/08 (2006.01); B08B 3/12 (2006.01); G03F 1/82 (2012.01)
CPC B08B 3/08 (2013.01) [B08B 3/12 (2013.01); G03F 1/82 (2013.01); H01L 21/02068 (2013.01); B08B 2203/005 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for cleaning a substrate, comprising:
receiving a photomask substrate with a multilayered reflective structure disposed over a surface of the photomask substrate, a capping layer disposed on the multilayered reflective structure, and an absorber disposed over the capping layer, wherein the photomask substrate has a plurality of conductive nanoparticles disposed over the surface of the photomask substrate;
applying a first mixture comprising an SCl solution, deionized (DI) water, and ozone (O3) to the photomask substrate to remove the conductive nanoparticles; and
applying a second mixture to the photomask substrate, wherein the second mixture comprises DI water and H2, and a temperature of the second mixture is between approximately 20° C. and 40° C.,
wherein the applying of the second mixture further comprises a mega sonic agitation, and a frequency of the mega sonic agitation is greater than 3 MHz,
wherein a flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min, and a flow rate of the second mixture is between approximately 1000 ml/min and approximately 3000 ml/min.