CPC B08B 3/08 (2013.01) [B08B 3/12 (2013.01); G03F 1/82 (2013.01); H01L 21/02068 (2013.01); B08B 2203/005 (2013.01)] | 20 Claims |
1. A method for cleaning a substrate, comprising:
receiving a photomask substrate with a multilayered reflective structure disposed over a surface of the photomask substrate, a capping layer disposed on the multilayered reflective structure, and an absorber disposed over the capping layer, wherein the photomask substrate has a plurality of conductive nanoparticles disposed over the surface of the photomask substrate;
applying a first mixture comprising an SCl solution, deionized (DI) water, and ozone (O3) to the photomask substrate to remove the conductive nanoparticles; and
applying a second mixture to the photomask substrate, wherein the second mixture comprises DI water and H2, and a temperature of the second mixture is between approximately 20° C. and 40° C.,
wherein the applying of the second mixture further comprises a mega sonic agitation, and a frequency of the mega sonic agitation is greater than 3 MHz,
wherein a flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min, and a flow rate of the second mixture is between approximately 1000 ml/min and approximately 3000 ml/min.
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