US 11,690,300 B2
Quantum computing devices with an increased channel mobility
Maja C. Cassidy, Glebe (AU); Sebastian J. Pauka, Sydney (AU); and Cioffi Nicole Allen, Redmond, WA (US)
Assigned to Microsoft Technology Licensing, LLC, Redmond, WA (US)
Filed by Microsoft Technology Licensing, LLC, Redmond, WA (US)
Filed on Aug. 10, 2021, as Appl. No. 17/398,613.
Application 17/398,613 is a division of application No. 16/543,422, filed on Aug. 16, 2019, granted, now 11,121,303.
Prior Publication US 2023/0146657 A1, May 11, 2023
Int. Cl. H10N 60/01 (2023.01); H01L 29/06 (2006.01); H01L 39/24 (2006.01)
CPC H01L 39/2493 (2013.01) [H01L 29/06 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A topological quantum computing device comprising:
a quantum well formed in a substrate;
a superconducting metal layer formed on a surface of the substrate; and
a gate dielectric formed over the superconducting metal layer after selectively removing a portion of the superconducting metal layer to define a topologically active area of the topological quantum computing device, wherein the gate dielectric is formed after subjecting the substrate to a plasma treatment, wherein a set of parameters associated with the plasma treatment is selected to both increase channel mobility of a channel adjacent to the quantum well associated with the topological quantum computing device and increase a density of electrons within the quantum well, and wherein the plasma treatment further results in a formation of a clean semiconductor-dielectric interface between the topologically active area of the topological quantum computing device and a topologically inactive area of the topological quantum computing device.