CPC H10K 10/474 (2023.02) [H10K 10/464 (2023.02); H10K 10/478 (2023.02); H10K 10/484 (2023.02); H10K 71/231 (2023.02)] | 14 Claims |
1. A top-gate, bottom-contact organic field effect transistor on a substrate, which top-gate, bottom-contact organic field effect transistor comprises source and drain electrodes, a semiconducting layer, a cured first dielectric layer, a second dielectric layer and a gate electrode, wherein
i) the cured first dielectric layer and the semiconducting layer cover the path between the source and drain electrodes and optionally also partially or completely cover the source and drain electrodes, and
ii) the cured first dielectric layer and the semiconducting layer are embedded in the second dielectric layer,
wherein the cured first dielectric layer is the reaction product of a composition comprising a first dielectric material and a crosslinking agent carrying a least two azide groups,
wherein the first dielectric material comprises a star-shaped polymer consisting of at least one polymer block A and at least two polymer blocks B, wherein each polymer block B is attached to the polymer block A, and wherein at least 60 mol % of the repeat units of polymer block B are selected from the group consisting of
wherein R1, R2, R3, R4, R5, R6, R7 and R8 are independently and at each occurrence H or C1-10-alkyl.
|