CPC H01L 27/222 (2013.01) [G11B 5/3909 (2013.01); G11C 11/1673 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01)] | 20 Claims |
1. A magnetoresistive stack comprising:
an electrically conductive material;
a seed region disposed above the electrically conductive material, wherein the seed region includes tantalum;
a fixed magnetic region disposed above the seed region, wherein the fixed magnetic region includes a synthetic antiferromagnetic structure comprising:
a first ferromagnetic region disposed above the seed region;
a coupling layer disposed on and in contact with the first ferromagnetic region; and
a second ferromagnetic region disposed on and in contact with the coupling layer;
a first dielectric layer disposed above the second ferromagnetic region;
a free magnetic region disposed above the first dielectric layer;
a second dielectric layer disposed above the free magnetic region; and
a third magnetic region disposed above the second dielectric layer.
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