CPC H01L 29/78696 (2013.01) [H01L 21/26513 (2013.01); H01L 21/28088 (2013.01); H01L 21/28185 (2013.01); H01L 21/28202 (2013.01); H01L 21/28238 (2013.01); H01L 21/324 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/1054 (2013.01); H01L 29/42364 (2013.01); H01L 29/42392 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01)] | 20 Claims |
1. A method comprising:
forming a silicon germanium layer on a substrate;
oxidizing a surface layer of the silicon germanium layer to form an interfacial layer comprising silicon oxide and germanium oxide;
nitridating the interfacial layer; and
forming a metal gate structure over the nitridated interfacial layer.
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