CPC H01L 29/785 (2013.01) [H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/16 (2013.01); H01L 29/1608 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01)] | 20 Claims |
1. A semiconductor device structure, comprising:
a fin structure protruding above a substrate;
a semiconductive capping layer wrapping around three sides of a channel region of the fin structure;
an oxide layer wrapping around three sides of the semiconductive capping layer, wherein a thickness of a top portion of the semiconductive capping layer is less than a thickness of a top portion of the oxide layer; and
a gate structure wrapping around three sides of the oxide layer.
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