US 11,688,794 B2
Method for epitaxial growth and device
Tzu-Hsiang Hsu, Xinfeng Township (TW); Ting-Yeh Chen, Hsinchu (TW); Wei-Yang Lee, Taipei (TW); Feng-Cheng Yang, Zhudong Township (TW); and Yen-Ming Chen, Chu-Pei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 21, 2022, as Appl. No. 17/651,839.
Application 17/651,839 is a division of application No. 16/682,305, filed on Nov. 13, 2019, granted, now 11,257,928.
Claims priority of provisional application 62/771,847, filed on Nov. 27, 2018.
Prior Publication US 2022/0181469 A1, Jun. 9, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/764 (2006.01); H01L 21/8238 (2006.01); H10B 10/00 (2023.01)
CPC H01L 29/66636 (2013.01) [H01L 21/02507 (2013.01); H01L 21/02532 (2013.01); H01L 21/3065 (2013.01); H01L 21/764 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01); H10B 10/12 (2023.02); H10B 10/18 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first semiconductor fin and a second semiconductor fin, the first semiconductor fin and the second semiconductor fin extending from a substrate;
a gate electrode over the first semiconductor fin and the second semiconductor fin; and
a source/drain region adjacent to the gate electrode and over the first semiconductor fin and the second semiconductor fin, wherein a top surface of the source/drain region is higher than a top surface of the first semiconductor fin and the second semiconductor fin under the gate electrode, wherein the source/drain region comprises a plurality of buffer layers and a plurality of body layers, wherein the source/drain region comprises alternating layers of a buffer layer of the plurality of buffer layers and a body layer of the plurality of body layers, wherein a lower sidewall of a first body layer of the plurality of body layers is covered by a second body layer of the plurality of body layers, wherein at least one body layer of the plurality of body layers is free of facets.