US 11,688,790 B2
HEMT and method of fabricating the same
Chih-Wei Chang, Tainan (TW); Yao-Hsien Chung, Kaohsiung (TW); Shih-Wei Su, Tainan (TW); Hao-Hsuan Chang, Kaohsiung (TW); Da-Jun Lin, Kaohsiung (TW); Ting-An Chien, Tainan (TW); and Bin-Siang Tsai, Changhua County (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Jan. 6, 2021, as Appl. No. 17/143,135.
Claims priority of application No. 202011344582.7 (CN), filed on Nov. 26, 2020.
Prior Publication US 2022/0165866 A1, May 26, 2022
Int. Cl. H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01)
CPC H01L 29/66462 (2013.01) [H01L 29/2003 (2013.01); H01L 29/4236 (2013.01); H01L 29/42364 (2013.01); H01L 29/7786 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A high electron mobility transistor (HEMT) comprising:
a first III-V compound layer;
a second III-V compound layer disposed on the first III-V compound layer, wherein a composition of the first III-V compound layer is different from a composition of second III-V compound layer;
a trench disposed within the first III-V compound layer and the second III-V compound layer, wherein the trench has a first corner and a second corner both disposed within the first III-V compound layer, the first corner is formed by a first sidewall and a bottom of the trench and the second corner is formed by a second sidewall and the bottom of the trench;
a first dielectric layer contacting the first sidewall and a second dielectric layer contacting the second sidewall, wherein the first dielectric layer and the second dielectric layer are both disposed outside of the trench;
a gate disposed in the trench;
a source electrode disposed at one side of the gate;
a drain electrode disposed at another side of the gate; and
a gate electrode disposed directly on the gate.