CPC H01L 29/513 (2013.01) [H01L 21/31155 (2013.01); H01L 21/324 (2013.01); H01L 29/6656 (2013.01); H01L 29/66492 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
source/drain regions disposed in a semiconductor substrate, wherein the source/drain regions are laterally spaced;
a gate stack disposed over the semiconductor substrate and disposed between the source/drain regions;
a cap layer disposed over the gate stack, wherein a first lower surface of the cap layer contacts a first upper surface of the gate stack;
sidewall spacers disposed along sides of the gate stack;
a first dielectric layer disposed over the cap layer, wherein the first dielectric layer extends along sides of the sidewall spacers toward the semiconductor substrate; and
a second dielectric layer disposed over the first dielectric layer and over the source/drain regions.
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