CPC H01L 29/4908 (2013.01) [H01L 21/02603 (2013.01); H01L 21/28088 (2013.01); H01L 21/28518 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823842 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/45 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. A device comprising:
a first channel region;
a second channel region; and
a gate structure around the first channel region and the second channel region, the gate structure comprising:
a gate dielectric layer;
a first p-type work function metal on the gate dielectric layer, the first p-type work function metal comprising fluorine and aluminum;
a second p-type work function metal on the first p-type work function metal, the second p-type work function metal having a lower concentration of fluorine and a lower concentration of aluminum than the first p-type work function metal; and
a fill layer on the second p-type work function metal.
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