US 11,688,786 B2
Semiconductor device and method
Hsin-Yi Lee, Hsinchu (TW); Cheng-Lung Hung, Hsinchu (TW); and Chi On Chui, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 2, 2021, as Appl. No. 17/189,779.
Claims priority of provisional application 63/140,288, filed on Jan. 22, 2021.
Prior Publication US 2022/0238686 A1, Jul. 28, 2022
Int. Cl. H01L 29/49 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/4908 (2013.01) [H01L 21/02603 (2013.01); H01L 21/28088 (2013.01); H01L 21/28518 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823842 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/45 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first channel region;
a second channel region; and
a gate structure around the first channel region and the second channel region, the gate structure comprising:
a gate dielectric layer;
a first p-type work function metal on the gate dielectric layer, the first p-type work function metal comprising fluorine and aluminum;
a second p-type work function metal on the first p-type work function metal, the second p-type work function metal having a lower concentration of fluorine and a lower concentration of aluminum than the first p-type work function metal; and
a fill layer on the second p-type work function metal.