US 11,688,775 B2
Method of forming first and second contacts self-aligned top source/drain region of a vertical field-effect transistor
Juntao Li, Cohoes, NY (US); Kangguo Cheng, Schenectady, NY (US); and Brent A. Anderson, Jericho, VT (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Aug. 13, 2018, as Appl. No. 16/101,981.
Prior Publication US 2020/0052079 A1, Feb. 13, 2020
Int. Cl. H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/41733 (2013.01) [H01L 29/401 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor structure, comprising:
forming at least one fin disposed over a top surface of a substrate, the at least one fin providing a vertical transport channel for a vertical transport field-effect transistor;
forming a top source/drain region disposed over a top surface of the at least one fin;
forming an interlevel dielectric layer surrounding the top source/drain region and the at least one fin;
forming a first contact trench in the interlevel dielectric layer at a first end of the at least one fin for a bottom source/drain contact of the vertical transport field-effect transistor and a second contact trench in the interlevel dielectric layer at a second end of the at least one fin for a gate contact of the vertical transport field-effect transistor, the first and second contact trenches being self-aligned to the top source/drain region, the first contact trench abutting a portion of the top source/drain region at the first end of the at least one fin and the second contact trench abutting a portion of the top source/drain region at the second end of the at least one fin;
forming inner spacers on sidewalls of the first contact trench and the second contact trench; and
forming contact material in the first contact trench and the second contact trench between the inner spacers;
wherein the contact material comprises a stressor material that induces vertical strain in the at least one fin.