US 11,688,767 B2
Semiconductor device structure and method for forming the same
Ming-Shuan Li, Zhudong Township, Hsinchu County (TW); and Ming-Lung Cheng, Kaohsiung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 25, 2021, as Appl. No. 17/184,922.
Prior Publication US 2022/0271124 A1, Aug. 25, 2022
Int. Cl. H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/0673 (2013.01) [H01L 29/66553 (2013.01); H01L 29/7848 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
first nanostructures formed over a substrate;
a first gate structure wrapped around the first nanostructures;
first source/drain epitaxial structures formed over opposite sides of the first nanostructures;
second nanostructures formed over the first nanostructure;
a second gate structure wrapped around the second nanostructures;
second source/drain epitaxial structures formed over opposite sides of the second nanostructures;
a power rail formed below a bottom surface of the first source/drain epitaxial structures and electrically connected to the first source/drain epitaxial structures,
a first inner spacer formed beside the first gate structure; and
a second inner spacer formed beside the second gate structure,
wherein the first inner spacer is wider than the second inner spacer;
wherein the first gate structure and the second gate structure have different conductivity types, and a Ge concentration of the first nanostructures and a Ge concentration of the second nanostructures are different.