CPC H01L 29/0653 (2013.01) [H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 27/0886 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a gate electrode on a fin region;
a source/drain (S/D) structure on the fin region;
an etch stop layer on a sidewall of the S/D structure;
a seal layer between the gate electrode and the etch stop layer, wherein the seal layer comprises a silicon carbide material doped with oxygen; and
an air gap in physical contact with the etch stop layer and surrounded by the seal layer, the fin region, the gate electrode, and the S/D structure.
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