US 11,688,763 B2
Semiconductor device having side-diffused trench plug
Ader Shen, Hsin-Chu County (TW); Ting-Fung Chang, Hsin-Chu County (TW); James Lu, Hsin-Chu County (TW); and Wayne Lin, Hsin-Chu County (TW)
Assigned to Littelfuse, Inc., Chicago, IL (US)
Filed by Littelfuse, Inc., Chicago, IL (US)
Filed on Nov. 17, 2020, as Appl. No. 16/950,420.
Application 16/950,420 is a continuation of application No. 16/457,500, filed on Jun. 28, 2019, granted, now 10,943,975.
Application 16/457,500 is a continuation of application No. 15/190,469, filed on Jun. 23, 2016, abandoned.
Prior Publication US 2021/0091178 A1, Mar. 25, 2021
Int. Cl. H01L 29/06 (2006.01); H01L 21/74 (2006.01); H01L 21/76 (2006.01); H01L 21/306 (2006.01); H01L 21/3205 (2006.01); H01L 21/324 (2006.01); H01L 21/763 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 29/861 (2006.01)
CPC H01L 29/0642 (2013.01) [H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H01L 21/32055 (2013.01); H01L 21/743 (2013.01); H01L 21/76 (2013.01); H01L 21/763 (2013.01); H01L 21/76877 (2013.01); H01L 23/535 (2013.01); H01L 29/8611 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device structure comprising:
a semiconductor plug comprising:
a substrate base comprising a first dopant type;
a semiconductor layer comprising a second dopant type, the semiconductor layer disposed on the substrate base and having an upper surface;
a trench etched into the semiconductor layer, the trench having a depth less than a thickness of the semiconductor layer; and
a diffusion region extending from one or more sides of the trench into the semiconductor layer;
wherein the diffusion region extends from a bottom surface of the trench in the semiconductor layer and into the substrate base.