CPC H01L 29/0642 (2013.01) [H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H01L 21/32055 (2013.01); H01L 21/743 (2013.01); H01L 21/76 (2013.01); H01L 21/763 (2013.01); H01L 21/76877 (2013.01); H01L 23/535 (2013.01); H01L 29/8611 (2013.01)] | 12 Claims |
1. A semiconductor device structure comprising:
a semiconductor plug comprising:
a substrate base comprising a first dopant type;
a semiconductor layer comprising a second dopant type, the semiconductor layer disposed on the substrate base and having an upper surface;
a trench etched into the semiconductor layer, the trench having a depth less than a thickness of the semiconductor layer; and
a diffusion region extending from one or more sides of the trench into the semiconductor layer;
wherein the diffusion region extends from a bottom surface of the trench in the semiconductor layer and into the substrate base.
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