US 11,688,759 B2
Metal-insulator-metal capacitive structure and methods of fabricating thereof
Hsiang-Ku Shen, Hsinchu (TW); Ming-Hong Kao, Hsinchu (TW); Hui-Chi Chen, Hsinchu County (TW); Dian-Hau Chen, Hsinchu (TW); and Yen-Ming Chen, Hsin-Chu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 2, 2021, as Appl. No. 17/305,276.
Application 17/305,276 is a division of application No. 16/439,385, filed on Jun. 12, 2019, granted, now 11,056,556.
Claims priority of provisional application 62/738,478, filed on Sep. 28, 2018.
Prior Publication US 2021/0328005 A1, Oct. 21, 2021
Int. Cl. H01L 23/522 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/60 (2013.01) 20 Claims
OG exemplary drawing
 
1. A metal-insulator-metal (MIM) capacitor structure, comprising:
a bottom electrode formed over a substrate;
a first oxide layer coplanar with the bottom electrode, wherein the first oxide layer has a first thickness and the bottom electrode has a second thickness, the first thickness greater than the second thickness;
a first high-k dielectric layer on the first oxide layer and the bottom electrode;
a middle electrode over the first high-k dielectric layer;
a second oxide layer coplanar with the middle electrode;
a second high-k dielectric layer over the second oxide layer and the middle electrode; and
a top electrode over the second high-k dielectric layer.