CPC H01L 28/60 (2013.01) | 20 Claims |
1. A metal-insulator-metal (MIM) capacitor structure, comprising:
a bottom electrode formed over a substrate;
a first oxide layer coplanar with the bottom electrode, wherein the first oxide layer has a first thickness and the bottom electrode has a second thickness, the first thickness greater than the second thickness;
a first high-k dielectric layer on the first oxide layer and the bottom electrode;
a middle electrode over the first high-k dielectric layer;
a second oxide layer coplanar with the middle electrode;
a second high-k dielectric layer over the second oxide layer and the middle electrode; and
a top electrode over the second high-k dielectric layer.
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