US 11,688,735 B2
Quantum dot devices
James S. Clarke, Portland, OR (US); Nicole K. Thomas, Portland, OR (US); Zachary R. Yoscovits, Beaverton, OR (US); Hubert C. George, Portland, OR (US); Jeanette M. Roberts, North Plains, OR (US); and Ravi Pillarisetty, Portland, OR (US)
Assigned to Intel Corporation
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Jun. 8, 2021, as Appl. No. 17/341,559.
Application 17/341,559 is a continuation of application No. 16/340,512, granted, now 11,063,040, previously published as PCT/US2016/068603, filed on Dec. 24, 2016.
Claims priority of provisional application 62/417,047, filed on Nov. 3, 2016.
Prior Publication US 2021/0296480 A1, Sep. 23, 2021
Int. Cl. H01L 29/775 (2006.01); H10N 69/00 (2023.01); H01L 27/088 (2006.01); G06N 10/00 (2022.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); B82Y 10/00 (2011.01)
CPC H01L 27/088 (2013.01) [G06N 10/00 (2019.01); H01L 21/823456 (2013.01); H01L 29/66977 (2013.01); H01L 29/778 (2013.01); H10N 69/00 (2023.02); B82Y 10/00 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A quantum dot device, comprising:
a quantum well stack;
first gates above the quantum well stack;
second gates above the quantum well stack; and
an insulator material between a gate metal of the first gates and a gate metal of the second gates, wherein the gate metal of the first gates is between the insulator material and the quantum well stack.