CPC H01L 27/088 (2013.01) [G06N 10/00 (2019.01); H01L 21/823456 (2013.01); H01L 29/66977 (2013.01); H01L 29/778 (2013.01); H10N 69/00 (2023.02); B82Y 10/00 (2013.01)] | 22 Claims |
1. A quantum dot device, comprising:
a quantum well stack;
first gates above the quantum well stack;
second gates above the quantum well stack; and
an insulator material between a gate metal of the first gates and a gate metal of the second gates, wherein the gate metal of the first gates is between the insulator material and the quantum well stack.
|