CPC H01L 24/03 (2013.01) [H01L 21/76855 (2013.01); H01L 21/76865 (2013.01); H01L 23/5283 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 24/08 (2013.01)] | 20 Claims |
1. A method of fabricating a semiconductor device, comprising:
forming an interconnect structure over a substrate;
forming a passivation layer over the interconnect structure;
forming an opening in the passivation layer to expose a portion of the interconnect structure;
sequentially forming a lower barrier film, an upper barrier film, and an aluminum-containing layer in the opening,
wherein the lower barrier film and the upper barrier film are made of metal nitride, and the upper barrier film has a nitrogen atomic percentage that is higher than a nitrogen atomic percentage of the lower barrier film and has an amorphous structure.
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