US 11,688,695 B2
Semiconductor devices with shielding structures
Wei Liu, Wuhan (CN); Shiqi Huang, Wuhan (CN); and Liang Chen, Wuhan (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Wuhan (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Dec. 7, 2020, as Appl. No. 17/113,706.
Application 17/113,706 is a continuation of application No. PCT/CN2020/114724, filed on Sep. 11, 2020.
Prior Publication US 2022/0084955 A1, Mar. 17, 2022
Int. Cl. H01L 23/552 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 25/18 (2023.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 23/5286 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first die that comprises
a semiconductor substrate with transistors formed on a first side of the semiconductor substrate;
a connection structure extending through the semiconductor substrate and conductively connecting a first conductive layer disposed on the first side of the semiconductor substrate and a second conductive layer disposed on a second side of the semiconductor substrate that is opposite to the first side of the semiconductor substrate; and
a shielding structure disposed in the semiconductor substrate and between the connection structure and at least a transistor, the shielding structure comprising a third conductive layer, the shielding structure having a cross section parallel to the first side of the semiconductor substrate, the cross section forming an enclosed region within which a through substrate contact formed in the semiconductor substrate is enclosed and outside of which the transistor is formed.