CPC H01L 23/552 (2013.01) [H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 23/5286 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a first die that comprises
a semiconductor substrate with transistors formed on a first side of the semiconductor substrate;
a connection structure extending through the semiconductor substrate and conductively connecting a first conductive layer disposed on the first side of the semiconductor substrate and a second conductive layer disposed on a second side of the semiconductor substrate that is opposite to the first side of the semiconductor substrate; and
a shielding structure disposed in the semiconductor substrate and between the connection structure and at least a transistor, the shielding structure comprising a third conductive layer, the shielding structure having a cross section parallel to the first side of the semiconductor substrate, the cross section forming an enclosed region within which a through substrate contact formed in the semiconductor substrate is enclosed and outside of which the transistor is formed.
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