US 11,688,689 B2
Electronic devices including stair step structures, and related memory devices, systems, and methods
Jivaan Kishore Jhothiraman, Meridian, ID (US); and Jiewei Chen, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 6, 2021, as Appl. No. 17/313,814.
Prior Publication US 2022/0359391 A1, Nov. 10, 2022
Int. Cl. H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 23/5283 (2013.01) [H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 24 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a stack structure comprising tiers of alternating conductive structures and insulative structures;
staircase structures within the stack structure and including steps defined by edges of the tiers;
contacts on the steps of the staircase structures;
support pillars extending vertically through the stack structure;
support structures laterally adjacent to the contacts in a first horizontal direction and extending vertically through the stack structure, the support pillars exhibiting a lateral dimension relatively larger than a lateral dimension of the contacts and the support structures; and
a dielectric material within replacement gate slots extending through the stack structure, the support structures relatively closer to the replacement gate slots than to the support pillars in the first horizontal direction.