US 11,688,681 B2
DRAM chiplet structure and method for manufacturing the same
Wenliang Chen, Hsinchu County (TW)
Assigned to AP MEMORY TECHNOLOGY CORPORATION, Hsinchu County (TW)
Filed by AP MEMORY TECHNOLOGY CORPORATION, Hsinchu County (TW)
Filed on Jun. 11, 2021, as Appl. No. 17/346,175.
Claims priority of provisional application 63/069,480, filed on Aug. 24, 2020.
Prior Publication US 2022/0059455 A1, Feb. 24, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 23/522 (2006.01); H01L 21/48 (2006.01); H01L 23/528 (2006.01); G11C 5/06 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); G11C 11/409 (2006.01)
CPC H01L 23/5226 (2013.01) [G11C 5/06 (2013.01); G11C 11/409 (2013.01); H01L 21/486 (2013.01); H01L 21/76802 (2013.01); H01L 23/528 (2013.01); H01L 24/14 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A DRAM chiplet structure, comprising:
a first hybrid bonding structure having a first surface and a second surface;
a DRAM interface structure in contact with the first surface of the first hybrid bonding structure; and
a first DRAM core structure in contact with the second surface of the first hybrid bonding structure, and the DRAM interface structure is electrically connected to the first DRAM core structure through the first hybrid bonding structure.