US 11,688,658 B2
Semiconductor device
Hyunsuk Chun, Boise, ID (US); Shams U. Arifeen, Boise, ID (US); Chan H. Yoo, Boise, ID (US); and Tracy N. Tennant, Eagle, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Mar. 16, 2021, as Appl. No. 17/202,542.
Application 17/202,542 is a division of application No. 15/683,059, filed on Aug. 22, 2017, abandoned.
Prior Publication US 2021/0202337 A1, Jul. 1, 2021
Int. Cl. H01L 21/48 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 21/683 (2006.01); H01L 21/56 (2006.01)
CPC H01L 23/3128 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 23/3114 (2013.01); H01L 23/3135 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/18 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, comprising:
forming a redistribution layer (RDL) on a carrier substrate;
forming a first encapsulant on the RDL;
removing a number of portions out of the first encapsulant;
detaching the carrier substrate;
attaching a semiconductor die to the RDL in place of the detached carrier substrate;
forming a second encapsulant that encloses the semiconductor die and portions of the RDL facing toward but not in contact with the semiconductor die; and
attaching a number of interconnect structures into each of the number of portions removed from the first encapsulant.