CPC H01L 23/3128 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 23/3114 (2013.01); H01L 23/3135 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/18 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01)] | 20 Claims |
1. A method of forming a semiconductor device, comprising:
forming a redistribution layer (RDL) on a carrier substrate;
forming a first encapsulant on the RDL;
removing a number of portions out of the first encapsulant;
detaching the carrier substrate;
attaching a semiconductor die to the RDL in place of the detached carrier substrate;
forming a second encapsulant that encloses the semiconductor die and portions of the RDL facing toward but not in contact with the semiconductor die; and
attaching a number of interconnect structures into each of the number of portions removed from the first encapsulant.
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