US 11,688,645 B2
Structure and formation method of semiconductor device with fin structures
Kun-Yu Lee, Tainan (TW); Chunyao Wang, Zhubei (TW); and Chi On Chui, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 17, 2021, as Appl. No. 17/350,282.
Prior Publication US 2022/0406663 A1, Dec. 22, 2022
Int. Cl. H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01)
CPC H01L 21/823481 (2013.01) [H01L 21/02356 (2013.01); H01L 21/76224 (2013.01); H01L 27/0886 (2013.01); H01L 21/022 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02148 (2013.01); H01L 21/02164 (2013.01); H01L 21/02181 (2013.01); H01L 21/02183 (2013.01); H01L 21/02189 (2013.01); H01L 21/02192 (2013.01); H01L 21/02194 (2013.01); H01L 21/02271 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device structure, comprising:
forming a fin structure over a semiconductor substrate;
forming an isolation layer over the fin structure and the semiconductor substrate;
forming a protective layer over the isolation layer;
forming a dielectric layer over the protective layer; and
partially removing the isolation layer, the protective layer, and the dielectric layer, wherein a remaining portion of the isolation layer forms an isolation structure, remaining portions of the protective layer and the dielectric layer form a dielectric fin, the remaining portion of the protective layer forms a protective shell of the dielectric fin, the remaining portion of the dielectric layer forms a dielectric structure of the dielectric fin, the isolation structure laterally surrounds a lower portion of the fin structure and a lower portion of the dielectric fin, the protective shell has a first dielectric constant, the dielectric structure has a second dielectric constant, the first dielectric constant is higher than the second dielectric constant, the protective shell has a first average grain size, the dielectric structure has a second average grain size, and the first average grain size is larger than the second average grain size.