US 11,688,644 B2
Fin isolation structure for FinFET and method of forming the same
Chu-An Lee, Hsinchu (TW); Chen-Hao Wu, Hsinchu (TW); Peng-Chung Jangjian, Hsinchu (TW); Chun-Wen Hsiao, Hsinchu (TW); Teng-Chun Tsai, Hsinchu (TW); and Huang-Lin Chao, Hillsboro, OR (US)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 30, 2021, as Appl. No. 17/245,768.
Application 17/245,768 is a continuation of application No. 16/927,145, filed on Jul. 13, 2020, granted, now 10,998,239.
Application 16/927,145 is a continuation of application No. 16/277,326, filed on Feb. 15, 2019, granted, now 10,714,395, issued on Jul. 14, 2020.
Claims priority of provisional application 62/732,657, filed on Sep. 18, 2018.
Prior Publication US 2021/0265222 A1, Aug. 26, 2021
Int. Cl. H01L 21/8234 (2006.01); H01L 21/76 (2006.01); H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01)
CPC H01L 21/823481 (2013.01) [H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 21/31053 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a substrate having adjacent first and second fins protruding from the substrate;
a first gate structure and a second gate structure across the first and second fins, respectively;
an insulating structure between the first gate structure and the second gate structure, comprising:
a first insulating layer separating the first fin from the second fin;
a capping structure formed in the first insulating layer; and
a second insulating layer covered by the first insulating layer and the capping structure; and
a first insulating liner formed between the substrate and the first gate structure, and a second insulating liner formed between the substrate and the second gate structure, wherein the first insulating liner and the second are separated from each other by and in direct contact with the insulating structure.