US 11,688,639 B2
Semiconductor device and method
Chen-Hua Yu, Hsinchu (TW); Hung-Pin Chang, Taipei (TW); Yi-Hsiu Chen, Hsinchu (TW); Ku-Feng Yang, Baoshan Township (TW); and Wen-Chih Chiou, Zhunan Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Dec. 16, 2019, as Appl. No. 16/715,854.
Application 16/715,854 is a continuation of application No. 16/225,854, filed on Dec. 19, 2018, granted, now 10,510,604.
Application 16/225,854 is a continuation of application No. 14/622,420, filed on Feb. 13, 2015, granted, now 10,163,709, issued on Dec. 25, 2018.
Prior Publication US 2020/0118879 A1, Apr. 16, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/78 (2013.01) [H01L 24/97 (2013.01); H01L 21/02057 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/30608 (2013.01); H01L 2224/95 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
partially singulating a first semiconductor device of a semiconductor wafer from a second semiconductor device of the semiconductor wafer, the semiconductor wafer comprising a first semiconductor material, the first semiconductor device being a first semiconductor die and the second semiconductor device being a second semiconductor die;
thinning the first semiconductor material a first time and a second time different from the first time, wherein after the thinning the first semiconductor material the second time the first semiconductor device has a straight sidewall, wherein the thinning the first semiconductor material the second time reduces a thickness from between about 100 μm and 500 μm to between about 10 μm and 250 μm, wherein during the thinning the first semiconductor material the first time a cover is placed over the first semiconductor device and the second semiconductor device, the cover being removed prior to the thinning the first semiconductor material the second time, the thinning the first semiconductor material occurring after the partially singulating removes a portion of the first semiconductor material;
sawing the first semiconductor material between the thinning the first semiconductor material the first time and the thinning the first semiconductor material the second time;
bonding the first semiconductor device to a third semiconductor die and bonding the second semiconductor device to a fourth semiconductor die within a second semiconductor substrate, wherein the third semiconductor die and the fourth semiconductor die are part of a second semiconductor wafer during the bonding, the bonding occurring prior to the thinning the first semiconductor material the second time, wherein the first semiconductor device and the second semiconductor wafer are in a chip on wafer configuration after the bonding, the bonding the first semiconductor device to the third semiconductor die placing a contact pad of the first semiconductor die and a dielectric layer of the first semiconductor die in physical contact with the third semiconductor die, the contact pad and the dielectric layer being coplanar with each other, wherein an interface between the dielectric layer of the first semiconductor die and the third semiconductor die extends from an exposed first external sidewall of the first semiconductor die to an exposed second external sidewall of the first semiconductor die, wherein the interface has a first width during the bonding, wherein both the first external sidewall and the second external sidewall are planar from a first side of the first semiconductor die to a second side of the second semiconductor die, and wherein the first width equals a second width of the first semiconductor die and wherein the first width is smaller than a third width of a semiconductor substrate of the third semiconductor die, wherein after the bonding the dielectric layer of the first semiconductor die has a sidewall that is planar with a sidewall of the first semiconductor material of the first semiconductor die; and
singulating the second semiconductor wafer after the bonding.