US 11,688,638 B2
Production of very small or thin dies
Winston K. Chan, Princeton, NJ (US); and Joey J. Michalchuk, Lambertville, NJ (US)
Assigned to SRI International, Menlo Park, CA (US)
Appl. No. 16/497,113
Filed by SRI International, Menlo Park, CA (US)
PCT Filed Mar. 27, 2018, PCT No. PCT/US2018/024541
§ 371(c)(1), (2) Date Sep. 24, 2019,
PCT Pub. No. WO2018/183309, PCT Pub. Date Oct. 4, 2018.
Claims priority of provisional application 62/477,907, filed on Mar. 28, 2017.
Prior Publication US 2021/0125867 A1, Apr. 29, 2021
Int. Cl. H01L 21/683 (2006.01); H01L 21/78 (2006.01); B32B 43/00 (2006.01); C09J 9/02 (2006.01); C09J 11/04 (2006.01); C09J 191/06 (2006.01); H01L 21/67 (2006.01); H01L 29/06 (2006.01); C08K 3/08 (2006.01)
CPC H01L 21/78 (2013.01) [B32B 43/006 (2013.01); C09J 9/02 (2013.01); C09J 11/04 (2013.01); C09J 191/06 (2013.01); H01L 21/67092 (2013.01); H01L 21/6835 (2013.01); H01L 29/0657 (2013.01); C08K 2003/085 (2013.01); C08K 2003/0806 (2013.01); C08K 2003/0831 (2013.01); C08K 2201/001 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a die, comprising:
singulating a plurality of dies on a wafer with an ion etching process using an etching tool that uses an ion beam;
using an electrically-conductive-adhesive-composition between the wafer and a porous substrate carrying the wafer during the ion etching process, where the electrically-conductive-adhesive-composition adheres the wafer to the porous substrate to keep the dies in place during the ion etching process, where the electrically-conductive-adhesive-composition also aids in at least one of conducting electrons away from the wafer as a drain or conducting electrons into the wafer as a source of electrons during the ion etching process; and
after the etching process, then during a handling process of the manufacturing process, a heat-applying-extraction-tool applies heat to melt the electrically-conductive-adhesive-composition through the porous substrate to an evacuation component in order to then pick up an individual die singulated from the wafer.