CPC H01L 21/78 (2013.01) [B32B 43/006 (2013.01); C09J 9/02 (2013.01); C09J 11/04 (2013.01); C09J 191/06 (2013.01); H01L 21/67092 (2013.01); H01L 21/6835 (2013.01); H01L 29/0657 (2013.01); C08K 2003/085 (2013.01); C08K 2003/0806 (2013.01); C08K 2003/0831 (2013.01); C08K 2201/001 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01)] | 20 Claims |
1. A method of manufacturing a die, comprising:
singulating a plurality of dies on a wafer with an ion etching process using an etching tool that uses an ion beam;
using an electrically-conductive-adhesive-composition between the wafer and a porous substrate carrying the wafer during the ion etching process, where the electrically-conductive-adhesive-composition adheres the wafer to the porous substrate to keep the dies in place during the ion etching process, where the electrically-conductive-adhesive-composition also aids in at least one of conducting electrons away from the wafer as a drain or conducting electrons into the wafer as a source of electrons during the ion etching process; and
after the etching process, then during a handling process of the manufacturing process, a heat-applying-extraction-tool applies heat to melt the electrically-conductive-adhesive-composition through the porous substrate to an evacuation component in order to then pick up an individual die singulated from the wafer.
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