CPC H01L 21/76832 (2013.01) [H01L 21/02274 (2013.01); H01L 21/76834 (2013.01); H01L 23/5226 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/13024 (2013.01)] | 20 Claims |
17. An integrated circuit (IC) structure, comprising:
a semiconductor substrate;
an interconnect structure over the semiconductor substrate;
a plurality of metal lines on the interconnect structure;
a porous liner over the plurality of metal lines;
a porous-free passivation layer over the porous liner; and
a nitride layer over the porous-free passivation layer.
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