CPC H01L 21/76254 (2013.01) [H01L 21/02532 (2013.01)] | 16 Claims |
1. A method for producing a semiconductor-on-insulator type substrate, comprising:
successively epitaxially depositing a smoothing layer and a first semiconductor layer on a monocrystalline support substrate to form a donor substrate, the smoothing layer forming an etching barrier layer relative to material of the support substrate;
producing an assembly by contacting the donor substrate with a receiver substrate;
transferring, onto the receiver substrate, the first semiconductor layer, the smoothing layer and a portion of the support substrate; and
selectively etching the portion of the support substrate relative to the smoothing layer;
the method further comprising, after selectively etching the portion of the support substrate, in a same epitaxy frame and without re-venting:
selectively etching the smoothing layer relative to the first semiconductor layer; and
epitaxially depositing a second semiconductor layer on the first semiconductor layer;
wherein selectively etching the smoothing layer and epitaxially depositing the second semiconductor layer are carried out at temperatures less than or equal to 500° C.
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