US 11,688,629 B2
Low-temperature method for manufacturing a semiconductor-on-insulator substrate
Shay Reboh, Grenoble (FR); and Jean-Michel Hartmann, Grenoble (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed on Nov. 26, 2021, as Appl. No. 17/456,607.
Claims priority of application No. 20 12257 (FR), filed on Nov. 27, 2020.
Prior Publication US 2022/0172984 A1, Jun. 2, 2022
Int. Cl. H01L 21/762 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/76254 (2013.01) [H01L 21/02532 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for producing a semiconductor-on-insulator type substrate, comprising:
successively epitaxially depositing a smoothing layer and a first semiconductor layer on a monocrystalline support substrate to form a donor substrate, the smoothing layer forming an etching barrier layer relative to material of the support substrate;
producing an assembly by contacting the donor substrate with a receiver substrate;
transferring, onto the receiver substrate, the first semiconductor layer, the smoothing layer and a portion of the support substrate; and
selectively etching the portion of the support substrate relative to the smoothing layer;
the method further comprising, after selectively etching the portion of the support substrate, in a same epitaxy frame and without re-venting:
selectively etching the smoothing layer relative to the first semiconductor layer; and
epitaxially depositing a second semiconductor layer on the first semiconductor layer;
wherein selectively etching the smoothing layer and epitaxially depositing the second semiconductor layer are carried out at temperatures less than or equal to 500° C.