US 11,688,628 B2
Method of manufacturing epitaxy substrate
Ying-Ru Shih, Hsinchu (TW); Chih-Yuan Chuang, Hsinchu (TW); Chi-Tse Lee, Hsinchu (TW); Chun-I Fan, Hsinchu (TW); and Wen-Ching Hsu, Hsinchu (TW)
Assigned to GlobalWafers Co., Ltd., Hsinchu (TW)
Filed by GlobalWafers Co., Ltd., Hsinchu (TW)
Filed on Jul. 14, 2021, as Appl. No. 17/375,008.
Application 17/375,008 is a division of application No. 16/354,188, filed on Mar. 15, 2019, granted, now 11,201,080.
Claims priority of application No. 107111728 (TW), filed on Apr. 3, 2018.
Prior Publication US 2021/0343583 A1, Nov. 4, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); B32B 3/02 (2006.01); B32B 18/00 (2006.01); H01L 21/265 (2006.01)
CPC H01L 21/76251 (2013.01) [B32B 3/02 (2013.01); B32B 18/00 (2013.01); H01L 21/02021 (2013.01); H01L 21/26506 (2013.01); H01L 29/04 (2013.01); H01L 29/0603 (2013.01); B32B 2250/02 (2013.01); B32B 2307/20 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of manufacturing an epitaxy substrate, the method comprising:
providing a handle substrate;
performing a beveling treatment on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 μm and less than 200 μm;
performing an ion implantation process on a first surface of the device substrate to form an implantation region within the first surface; and
bonding a second surface of the device substrate to the handle substrate to form the epitaxy substrate, wherein a bonding angle greater than 90° is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 μm and 800 μm.