CPC H01L 21/76224 (2013.01) [H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/66795 (2013.01); H01L 21/0243 (2013.01); H01L 21/0245 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/02532 (2013.01); H01L 21/02667 (2013.01)] | 20 Claims |
1. A method for manufacturing a semiconductor device, comprising: forming at least one epitaxial layer over a substrate; forming a mask over the epitaxial layer; patterning the epitaxial layer into a semiconductor fin; depositing a conformal semiconductor capping layer over the semiconductor fin and the mask, wherein the conformal semiconductor capping layer has a first portion that is amorphous on a sidewall of the mask and a second portion that is crystalline on a sidewall of the semiconductor fin; performing a thermal treatment such that the first portion of the conformal semiconductor capping layer is converted from amorphous into crystalline; forming an isolation structure around the semiconductor fin; and forming a gate structure over the semiconductor fin.
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