US 11,688,615 B2
System and method for heating semiconductor wafers
Wen-Hao Cheng, Hsinchu (TW); Hsuan-Chih Chu, Hsinchu (TW); and Yen-Yu Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 19, 2020, as Appl. No. 16/997,686.
Prior Publication US 2022/0059375 A1, Feb. 24, 2022
Int. Cl. H01L 21/67 (2006.01); H01L 21/324 (2006.01); H01L 21/66 (2006.01); H01L 21/683 (2006.01)
CPC H01L 21/67248 (2013.01) [H01L 21/324 (2013.01); H01L 21/67103 (2013.01); H01L 22/26 (2013.01); H01L 21/67011 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A wafer support, comprising:
a top surface configured to support a semiconductor wafer;
an array of heating elements positioned below the top surface and configured to output heat;
an array of temperature sensors including, for each heating element, a respective first temperature sensor configured to generate first sensor signals;
a plurality of first electrical connectors coupled to the heating elements and configured to enable selective control of individual heating elements; and
a plurality of second electrical connectors coupled to the first temperature sensors, wherein the each heating element includes a respective heating coil, wherein the array of temperature sensors includes, for each heating element, a respective second temperature sensor configured to generate second sensor signals.
 
10. A semiconductor process system, comprising:
a semiconductor process chamber;
a wafer support positioned in the semiconductor process chamber, the wafer support including:
a top surface configured to support a semiconductor wafer;
an array of heating elements below the top surface and each configured to heat the semiconductor wafer when the semiconductor wafer is positioned on the wafer support; and
an array of temperature sensors including, for each heating element, a respective first temperature sensor configured to generate first sensor signals; and
a control system communicatively coupled to the heating elements and the first temperature sensors and configured to selectively operate individual heating elements responsive, at least in part, to the first sensor signals, wherein the array of temperature sensors includes, for each heating element, a respective second temperature sensor configured to generate second sensor signals.
 
17. A system, comprising:
a semiconductor process chamber;
a wafer support positioned within a semiconductor process chamber and including a top surface configured to support a semiconductor wafer;
a plurality of heating elements within the wafer support and below a top surface of the wafer support, the heating elements configured to heat the semiconductor wafer during a semiconductor process, each heating element including a first temperature sensor configured to generate first sensor signals; and
a control system configured to selectively controlling individual heating elements responsive to the first sensor signals, wherein each heating element includes a second temperature sensor configured to generate second sensor signals, wherein the control system is configured to selectively control individual heating elements responsive to the second sensor signals.