CPC H01L 21/31053 (2013.01) [C09G 1/02 (2013.01); C09K 3/1409 (2013.01); C23F 1/12 (2013.01); H01L 21/02019 (2013.01); H01L 21/3063 (2013.01); H01L 21/30625 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01)] | 19 Claims |
1. A slurry for planarizing a metal-dielectric surface, comprising:
an abrasive including a ceria compound, wherein the abrasive consists of ceric hydroxide (Ce(OH)4);
a removal rate regulator to adjust removal rates of the slurry to metal and to non-metallic dielectric material, wherein the removal rate regulator includes organic acid, the organic acid has a functional group of R-COOH and has a molar mass in a range of 2000 and 8000 g/mol, wherein R represents a carbon chain, and a difference between a non-metallic dielectric material removal rate and a metal removal rate of the slurry is less than 100 angstrom/minute; and
a buffering agent to adjust a pH value of the slurry, wherein the buffering agent includes potassium dihydrogen phosphate (KH2PO4);
wherein the slurry comprises the non-metallic dielectric material removal rate higher than a metal oxide removal rate.
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