US 11,688,607 B2
Slurry
Chun-Hung Liao, Taichung (TW); Chung-Wei Hsu, Hsinchu County (TW); Tsung-Ling Tsai, Hsinchu (TW); Chen-Hao Wu, Hsinchu (TW); An-Hsuan Lee, Hsinchu (TW); Shen-Nan Lee, Hsinchu County (TW); Teng-Chun Tsai, Hsinchu (TW); and Huang-Lin Chao, Hillsboro, OR (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 27, 2020, as Appl. No. 16/940,287.
Application 16/940,287 is a division of application No. 16/170,539, filed on Oct. 25, 2018, granted, now 10,727,076.
Prior Publication US 2020/0357653 A1, Nov. 12, 2020
Int. Cl. H01L 21/3105 (2006.01); C09K 3/14 (2006.01); H01L 21/306 (2006.01); C09G 1/02 (2006.01); H01L 21/3063 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); C23F 1/12 (2006.01)
CPC H01L 21/31053 (2013.01) [C09G 1/02 (2013.01); C09K 3/1409 (2013.01); C23F 1/12 (2013.01); H01L 21/02019 (2013.01); H01L 21/3063 (2013.01); H01L 21/30625 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A slurry for planarizing a metal-dielectric surface, comprising:
an abrasive including a ceria compound, wherein the abrasive consists of ceric hydroxide (Ce(OH)4);
a removal rate regulator to adjust removal rates of the slurry to metal and to non-metallic dielectric material, wherein the removal rate regulator includes organic acid, the organic acid has a functional group of R-COOH and has a molar mass in a range of 2000 and 8000 g/mol, wherein R represents a carbon chain, and a difference between a non-metallic dielectric material removal rate and a metal removal rate of the slurry is less than 100 angstrom/minute; and
a buffering agent to adjust a pH value of the slurry, wherein the buffering agent includes potassium dihydrogen phosphate (KH2PO4);
wherein the slurry comprises the non-metallic dielectric material removal rate higher than a metal oxide removal rate.