US 11,688,605 B2
Semiconductor device with two-dimensional materials
Tse-An Chen, Taoyuan (TW); and Lain-Jong Li, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Oct. 23, 2020, as Appl. No. 17/78,247.
Claims priority of provisional application 63/031,229, filed on May 28, 2020.
Prior Publication US 2021/0375627 A1, Dec. 2, 2021
Int. Cl. H01L 21/18 (2006.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/24 (2006.01); H01L 29/76 (2006.01); H01L 21/78 (2006.01)
CPC H01L 21/187 (2013.01) [H01L 21/0254 (2013.01); H01L 21/02568 (2013.01); H01L 21/6835 (2013.01); H01L 21/7813 (2013.01); H01L 29/2003 (2013.01); H01L 29/24 (2013.01); H01L 29/66462 (2013.01); H01L 29/7606 (2013.01); H01L 2221/68368 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first two-dimensional (2D) layer on a first substrate;
attaching a second 2D layer to a carrier film, wherein the second 2D layer comprises a 2D material different from the first 2D layer;
bonding the second 2D layer to the first 2D layer to form a heterostack comprising the first and second 2D layers;
separating the heterostack of the first and second 2D layers from the first substrate;
attaching the heterostack to a second substrate, wherein the first 2D layer is in direct contact with the second substrate; and
removing the carrier film from the second 2D layer.