CPC H01L 21/187 (2013.01) [H01L 21/0254 (2013.01); H01L 21/02568 (2013.01); H01L 21/6835 (2013.01); H01L 21/7813 (2013.01); H01L 29/2003 (2013.01); H01L 29/24 (2013.01); H01L 29/66462 (2013.01); H01L 29/7606 (2013.01); H01L 2221/68368 (2013.01)] | 20 Claims |
1. A method, comprising:
forming a first two-dimensional (2D) layer on a first substrate;
attaching a second 2D layer to a carrier film, wherein the second 2D layer comprises a 2D material different from the first 2D layer;
bonding the second 2D layer to the first 2D layer to form a heterostack comprising the first and second 2D layers;
separating the heterostack of the first and second 2D layers from the first substrate;
attaching the heterostack to a second substrate, wherein the first 2D layer is in direct contact with the second substrate; and
removing the carrier film from the second 2D layer.
|