US 11,687,698 B2
Electromigration evaluation methodology with consideration of both self-heating and heat sink thermal effects
Hsien Yu Tseng, Hsinchu (TW); Amit Kundu, Hsinchu (TW); Chun-Wei Chang, Hsinchu (TW); Szu-Lin Liu, Hsinchu (TW); and Sheng-Feng Liu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Mar. 23, 2022, as Appl. No. 17/702,625.
Application 17/702,625 is a continuation of application No. 17/121,312, filed on Dec. 14, 2020, granted, now 11,288,437.
Application 17/121,312 is a continuation of application No. 16/425,862, filed on May 29, 2019, granted, now 10,867,109, issued on Dec. 15, 2020.
Claims priority of provisional application 62/720,475, filed on Aug. 21, 2018.
Prior Publication US 2022/0215151 A1, Jul. 7, 2022
Int. Cl. G06F 30/398 (2020.01); H01L 29/78 (2006.01); G06F 111/20 (2020.01); G06F 119/08 (2020.01); G06F 119/10 (2020.01)
CPC G06F 30/398 (2020.01) [G06F 2111/20 (2020.01); G06F 2119/08 (2020.01); G06F 2119/10 (2020.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for evaluating a heat sensitive structure comprising:
identifying a first heat generating structure in an integrated circuit design layout, the first heat generating structure having a nominal operating temperature and a first thermal coupling volume;
identifying a heat sensitive structure within the first thermal coupling volume having a nominal operating temperature Tnom;
calculating a nominal operating temperature increase ΔTh1 for the heat sensitive structure induced by thermal coupling between the first heat generating structure and the heat sensitive structure; and
evaluating a functional parameter of the heat sensitive structure at an evaluation temperature TE=Tnom+ΔTh1.