CPC G06F 1/1605 (2013.01) [B60K 35/00 (2013.01); H01L 27/3234 (2013.01); H01L 27/3258 (2013.01); B60K 2370/1523 (2019.05)] | 14 Claims |
1. A semiconductor apparatus comprising:
a first electrode arranged on an element substrate;
an insulating layer covering an end of the first electrode and being arranged on the element substrate;
a functional layer arranged on the first electrode and the insulating layer; and
a second electrode arranged above the first electrode and the insulating layer via the functional layer,
wherein, in a cross-section passing through the element substrate, the insulating layer, and the functional layer, the insulating layer includes
a first portion having a side surface inclining at an angle of 45° or more and 90° or less with respect to a parallel surface parallel to a bottom surface of the first electrode,
a second portion closer to a side of the element substrate than the first portion, and having a side surface inclining at an angle larger than 0° and smaller than 45° with respect to the parallel surface, and
a third portion on a side opposite to the element substrate with respect to the first portion, and having a side surface inclining at an angle larger than 0° and smaller than 45° with respect to the parallel surface, and
wherein, in the cross-sectional, a length of the second portion in a direction vertical to the parallel surface is larger than a length of the third portion in the vertical direction, and
wherein the first portion includes a fourth portion having a side surface inclining at an angle of 55° or more and 90° or less with respect to the parallel surface, and a length of the fourth portion in a direction vertical to the parallel surface is 50 nm or less.
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