	US 11,687,006 B2
	Method of manufacturing photo masks
Chien-Cheng Chen, Hsinchu County (TW); Chia-Jen Chen, Jhudong Township (TW); Hsin-Chang Lee, Zhubei (TW); Shih-Ming Chang, Hsinchu (TW); Tran-Hui Shen, Dounan Township (TW); Yen-Cheng Ho, Taichung (TW); and Chen-Shao Hsu, Changhua County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 9, 2022, as Appl. No. 17/740,048.
Application 17/080,652 is a division of application No. 15/966,862, filed on Apr. 30, 2018, granted, now 10,816,892, issued on Oct. 27, 2020.
Application 17/740,048 is a continuation of application No. 17/080,652, filed on Oct. 26, 2020, granted, now 11,327,405, issued on May 10, 2022.
Claims priority of provisional application 62/586,085, filed on Nov. 14, 2017.
Prior Publication US 2022/0260926 A1, Aug. 18, 2022
Int. Cl. G03F 7/00 (2006.01); G03F 1/36 (2012.01); G03F 1/78 (2012.01); H01J 37/317 (2006.01); G03F 1/76 (2012.01); G03F 7/20 (2006.01)

CPC G03F 7/70441 (2013.01) [G03F 1/36 (2013.01); G03F 1/78 (2013.01); G03F 1/76 (2013.01); G03F 7/2002 (2013.01); G03F 7/70358 (2013.01); G03F 7/70608 (2013.01); G03F 7/70616 (2013.01); G03F 7/70716 (2013.01); H01J 37/3174 (2013.01); H01J 2237/31771 (2013.01)]

20 Claims

1. A pattern formation method, comprising:

acquiring circuit pattern data;

generating base dummy pattern data for an entire circuit area;

enlarging each pattern of the circuit pattern data to generate enlarged circuit pattern data;

logically combining the enlarged circuit data pattern and the base dummy pattern data to generate dummy pattern data; and

generating drawing data by combining the dummy pattern data and the circuit pattern data,

wherein dummy patterns included in the dummy pattern data not printable as a pattern when a resist layer formed on a substrate is exposed with an electron beam by an electron beam lithography apparatus and is developed.