US 11,686,763 B2
Exposure monitor device
Edward John Coyne, Athenry (IE); Alan J. O'Donnell, Castletroy (IE); Shaun Bradley, Murroe (IE); David Aherne, Limerick (IE); David Boland, Limerick (IE); Thomas G. O'Dwyer, Arlington, MA (US); Colm Patrick Heffernan, Annacotty (IE); Kevin B. Manning, Andover, MA (US); Mark Forde, Nenagh (IE); David J. Clarke, Patrickswell (IE); and Michael A. Looby, Ballysheedy (IE)
Assigned to Analog Devices International Unlimited Company, Limerick (IE)
Filed by Analog Devices International Unlimited Company, Limerick (IE)
Filed on Feb. 28, 2022, as Appl. No. 17/652,857.
Application 17/652,857 is a continuation of application No. 17/062,225, filed on Oct. 2, 2020, granted, now 11,269,006.
Application 17/062,225 is a continuation of application No. 16/513,562, filed on Jul. 16, 2019, granted, now 10,794,950, issued on Oct. 6, 2020.
Application 16/513,562 is a continuation of application No. 15/490,584, filed on Apr. 18, 2017, granted, now 10,365,322, issued on Jul. 30, 2019.
Application 15/490,584 is a continuation in part of application No. 15/291,742, filed on Oct. 12, 2016, granted, now 10,338,132, issued on Jul. 2, 2019.
Claims priority of provisional application 62/455,481, filed on Feb. 6, 2017.
Claims priority of provisional application 62/447,824, filed on Jan. 18, 2017.
Claims priority of provisional application 62/324,828, filed on Apr. 19, 2016.
Prior Publication US 2022/0252664 A1, Aug. 11, 2022
Int. Cl. G01R 31/28 (2006.01); G01N 27/04 (2006.01)
CPC G01R 31/2879 (2013.01) [G01N 27/041 (2013.01); G01R 31/2874 (2013.01)] 22 Claims
OG exemplary drawing
 
1. An exposure monitor device comprising:
a dielectric substrate;
one or both of a diffusant reservoir and a diffusion region formed in or on the dielectric substrate, wherein the diffusant reservoir comprises a diffusant at a higher concentration relative to the diffusion region such that an exposure of the exposure monitor device to a stress condition causes atomic diffusion of the diffusant from the diffusant reservoir into the diffusion region; and
one or more measurement structures configured for measuring a signature indicative of the atomic diffusion caused by the exposure to the stress condition.