US 11,686,683 B2
System and method for detecting contamination of thin-films
Chung-Liang Cheng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 5, 2021, as Appl. No. 17/169,101.
Claims priority of provisional application 63/018,312, filed on Apr. 30, 2020.
Prior Publication US 2021/0341390 A1, Nov. 4, 2021
Int. Cl. G01N 21/64 (2006.01); G01N 21/95 (2006.01); G06F 30/27 (2020.01); C23C 14/54 (2006.01); G06N 3/08 (2023.01); B82Y 30/00 (2011.01)
CPC G01N 21/6489 (2013.01) [C23C 14/548 (2013.01); G01N 21/9501 (2013.01); G06F 30/27 (2020.01); G06N 3/08 (2013.01); B82Y 30/00 (2013.01); G01N 2021/6491 (2013.01)] 20 Claims
OG exemplary drawing
 
11. A system, comprising:
a thin-film deposition chamber configured to deposit a thin-film on a wafer;
a tube including:
a radiation source configured to irradiate the thin-film with excitation light;
an emissions sensor configured to detect an emission spectrum from the wafer responsive to the excitation light, wherein the tube is configured to extend partially into the thin-film deposition chamber such that the radiation source is external to the thin-film deposition chamber and the emissions sensor is within the thin-film deposition chamber; and
a control system coupled to the radiation source and the emissions sensor and configured to detect contamination of the thin-film by analyzing the emission spectrum and to stop thin-film deposition processes in the thin-film deposition chamber responsive to detecting contamination of the thin-film.