US 11,685,994 B2
CVD device pumping liner
Sheng-chun Yang, Tainan (TW); Yi-Ming Lin, Tainan (TW); Chih-tsung Lee, Hsinchu (TW); Yun-Tzu Chiu, Hsinchu (TW); and Chao-Hung Wan, Taichung (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Sep. 13, 2019, as Appl. No. 16/570,274.
Prior Publication US 2021/0079524 A1, Mar. 18, 2021
Int. Cl. C23C 16/44 (2006.01); C23C 16/458 (2006.01); C23C 16/50 (2006.01); C23C 16/455 (2006.01)
CPC C23C 16/4412 (2013.01) [C23C 16/4583 (2013.01); C23C 16/45565 (2013.01); C23C 16/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus for depositing a material on a work piece by chemical vapor deposition, the apparatus comprising:
a processing chamber, the processing chamber including a pedestal assembly, which in operation, supports a work piece; and
a pumping liner defining a circumferential body having a plurality of apertures including a first aperture, a second aperture and a third aperture, disposed around the circumferential body, through which gas within the processing chamber is exhausted from the processing chamber, each of the plurality of apertures consisting a first portion having a cylindrical shape and a circular cross section of a same diameter and a second portion having a frustoconical shape and a circular cross-section, the frustoconical shape of the second portion including a smaller diameter first end and a larger diameter second end, the first portion extending from the smaller diameter first end of the frustoconical shape of the second portion, the circumferential body including an inner circumferential surface, an outer circumferential surface, an upper surface and a lower surface, wherein each of the plurality of apertures are tilted relative to the upper surface, are tilted relative to the lower surface and extend through the body from the inner circumferential surface to the outer circumferential surface, the second aperture being intermediate the first aperture and the third aperture and directly adjacent to the first aperture and the third aperture, the first aperture and the second aperture defining a first aperture pair, a first distance between a centerline of the first aperture and a centerline of the second aperture of the first aperture pair measured along the outer circumferential surface separating the first aperture and the second aperture of the first aperture pair, the second aperture and the third aperture defining a second aperture pair, a second distance between a centerline of the second aperture and a centerline of the third aperture of the second aperture pair measured along the outer circumferential surface separating the second aperture and the third aperture of the second aperture pair; and
an exhaust port through which the gas which has passed through the first aperture, the second aperture and the third aperture of the pumping liner is exhausted from the processing chamber, wherein the first aperture pair is closer to the exhaust port than the second aperture pair and the first distance for the first aperture pair is less than the second distance for the second aperture pair.