US 11,685,861 B2
Quantum dot structure with excellent stability and method for making the same
Chang-Wei Yeh, Taoyuan (TW); and Hsueh-Shih Chen, Hsinchu (TW)
Assigned to NATIONAL TSING HUA UNIVERSITY, Hsinchu (TW)
Filed by National Tsing Hua University, Hsinchu (TW)
Filed on Jul. 21, 2021, as Appl. No. 17/382,196.
Claims priority of application No. 110106052 (TW), filed on Feb. 22, 2021.
Prior Publication US 2022/0267672 A1, Aug. 25, 2022
Int. Cl. C09K 11/88 (2006.01); C09K 11/08 (2006.01); B82Y 40/00 (2011.01); B82Y 20/00 (2011.01)
CPC C09K 11/883 (2013.01) [C09K 11/0883 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A quantum dot structure, comprising:
a core that is a single crystal of a compound M1C1 and that has a core surface, said core surface having a first region and a second region, said first region having a crystal plane that is inactive with oxygen, said second region having a crystal plane that is easily reactive with oxygen; and
an inner shell that is a single crystal of a compound M2C2 and that is formed on said first region of said core surface,
wherein
M1 is an element selected from the group consisting of Al, Ga, and In, and Cl is an element selected from the group consisting of P, As, and combinations thereof, and
M2 is an element selected from the group consisting of Zn, Pb, Ag, Cu, Mn, Cd, and Mg, and C2 is an element selected from the group consisting of S, Se, O, F, Cl, Br, I, Te, and combinations thereof.