US 11,685,656 B2
Method for manufacturing monocrystalline graphene
Jae-Young Choi, Suwon-si (KR); and Bum Jun Kim, Suwon-si (KR)
Assigned to Research & Business Foundation Sungkyunkwan University, Suwon-si (KR)
Filed by RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Suwon-si (KR)
Filed on Aug. 6, 2021, as Appl. No. 17/395,984.
Claims priority of application No. 10-2020-0099298 (KR), filed on Aug. 7, 2020; and application No. 10-2021-0048996 (KR), filed on Apr. 15, 2021.
Prior Publication US 2022/0041453 A1, Feb. 10, 2022
Int. Cl. C01B 32/186 (2017.01); B01J 23/72 (2006.01); C23C 16/26 (2006.01); C30B 29/02 (2006.01); C30B 25/18 (2006.01); C23C 16/02 (2006.01)
CPC C01B 32/186 (2017.08) [B01J 23/72 (2013.01); C23C 16/0227 (2013.01); C23C 16/26 (2013.01); C30B 25/186 (2013.01); C30B 29/02 (2013.01); C01B 2204/02 (2013.01); C01P 2002/01 (2013.01); C01P 2002/70 (2013.01); C01P 2002/82 (2013.01); C01P 2004/03 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method for manufacturing a monocrystalline graphene, the method comprising:
supplying an aromatic carbon gas to a single-crystalline metal catalyst placed in a process chamber for a desired growth time to grow the monocrystalline graphene,
wherein a temperature in the process chamber is maintained at 100 degrees Celsius or less without an additional heat supply until the manufacturing of the monocrystalline graphene is completed.