CPC C01B 32/186 (2017.08) [B01J 23/72 (2013.01); C23C 16/0227 (2013.01); C23C 16/26 (2013.01); C30B 25/186 (2013.01); C30B 29/02 (2013.01); C01B 2204/02 (2013.01); C01P 2002/01 (2013.01); C01P 2002/70 (2013.01); C01P 2002/82 (2013.01); C01P 2004/03 (2013.01)] | 13 Claims |
1. A method for manufacturing a monocrystalline graphene, the method comprising:
supplying an aromatic carbon gas to a single-crystalline metal catalyst placed in a process chamber for a desired growth time to grow the monocrystalline graphene,
wherein a temperature in the process chamber is maintained at 100 degrees Celsius or less without an additional heat supply until the manufacturing of the monocrystalline graphene is completed.
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