US 11,685,013 B2
Polishing pad for chemical mechanical planarization
Chih Hung Chen, Hsinchu (TW); Kei-Wei Chen, Tainan (TW); and Ying-Lang Wang, Tien-Chung Village (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 2, 2018, as Appl. No. 16/25,913.
Claims priority of provisional application 62/621,365, filed on Jan. 24, 2018.
Prior Publication US 2019/0224810 A1, Jul. 25, 2019
Int. Cl. B24B 37/26 (2012.01); B24B 37/16 (2012.01); B24B 37/24 (2012.01); B24B 37/04 (2012.01)
CPC B24B 37/24 (2013.01) [B24B 37/042 (2013.01); B24B 37/044 (2013.01); B24B 37/16 (2013.01); B24B 37/26 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A polishing pad comprising:
a pad layer; and
one or more polishing structures over an upper surface of the pad layer, wherein each of the one or more polishing structures has a pre-determined shape and is formed at a pre-determined location of the pad layer, wherein the one or more polishing structures comprise a first polygon shaped structure, a second polygon shaped structure, a third polygon shaped structure, a fourth polygon shaped structure, and a fifth polygon shaped structure in a plan view, wherein the first polygon shaped structure, the second polygon shaped structure, the third polygon shaped structure, the fourth polygon shaped structure, and the fifth polygon shaped structure protrude from and extend along the upper surface of the pad layer, wherein a first side of the first polygon shaped structure, a first side of the second polygon shaped structure, and a first side of the third polygon shaped structure are aligned along a first direction, wherein a second side of the first polygon shaped structure, a first side of the fourth polygon shaped structure, and a first side of the fifth polygon shaped structure are aligned along a second direction, wherein the first direction is perpendicular to the second direction, wherein each of the one or more polishing structures is a homogeneous material, wherein a third side of the first polygon shaped structure is a straight strip in the plan view, wherein the third side of the first polygon shaped structure is a second side of the second polygon shaped structure, wherein a third side of the second polygon shaped structure is a straight strip in the plan view, wherein the third side of the second polygon shaped structure is a second side of the third polygon shaped structure, wherein a fourth side of the first polygon shaped structure is a straight strip in the plan view, wherein the fourth side of the first polygon shaped structure is a second side of the fourth polygon shaped structure, wherein a third side of the fourth polygon shaped structure is a straight strip in the plan view, wherein the third side of the fourth polygon shaped structure is a second side of the fifth polygon shaped structure, wherein each of the one or more polishing structures has a rectangular cross-section with vertical sidewalls, wherein a width of the rectangular cross-section is between 0.5 mm and 5 mm, wherein a total area of top surfaces of the one or more polishing structures in a plan view is a first area, wherein a total area of the upper surface of the pad layer in the plan view is a second area, and wherein the first area is about 1% to about 10% of the second area.