CPC B06B 1/02 (2013.01) [B06B 1/0292 (2013.01); B81B 3/0021 (2013.01); B81B 7/0077 (2013.01); B81C 1/00158 (2013.01); G10K 9/12 (2013.01); G10K 11/18 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81B 2207/015 (2013.01); B81C 2201/013 (2013.01); B81C 2203/0118 (2013.01); B81C 2203/0735 (2013.01); B81C 2203/0771 (2013.01)] | 10 Claims |
1. An ultrasound transducer device, comprising:
a first silicon substrate;
a second silicon substrate fusion-bonded to the first silicon substrate with a gap between the first silicon substrate and the second silicon substrate;
a first conductive layer formed on the first silicon substrate;
a second conductive layer formed on the first conductive layer; and
a layer of silicon dioxide formed on the second conductive layer such that the second conductive layer is disposed between the first conductive layer and the layer of silicon dioxide.
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