US 11,683,992 B2
Magnetic memory device
Hyungjong Jeong, Seongnam-si (KR); Ki Woong Kim, Hwaseong-si (KR); Younghyun Kim, Seoul (KR); Junghwan Park, Seoul (KR); Byoungjae Bae, Hwaseong-si (KR); Se Chung Oh, Yongin-si (KR); Jungmin Lee, Gwangmyeong-si (KR); and Kyungil Hong, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Dec. 27, 2020, as Appl. No. 17/134,456.
Claims priority of application No. 10-2020-0058086 (KR), filed on May 15, 2020.
Prior Publication US 2021/0359198 A1, Nov. 18, 2021
Int. Cl. H10N 50/80 (2023.01); H10N 50/01 (2023.01); H10B 61/00 (2023.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01)
CPC H01L 43/02 (2013.01) [H01L 27/222 (2013.01); H01L 43/12 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A magnetic memory device, comprising:
a lower interlayer insulating layer on a substrate;
a bottom electrode contact disposed in the lower interlayer insulating layer; and
a magnetic tunnel junction pattern on the bottom electrode contact,
wherein the bottom electrode contact comprises a second region and a first region, which are sequentially disposed in a first direction perpendicular to a top surface of the substrate so that the second region is between the first region and the top surface of the substrate,
wherein a first width of the first region of the bottom electrode contact is smaller than a second width of the second region of the bottom electrode contact, when measured in a second direction parallel to the top surface of the substrate, and
wherein the bottom electrode contact further comprises a third region having the second width and stacked on the first region.