US 11,683,989 B2
Data storage devices and methods for manufacturing the same
Jongchul Park, Seongnam-si (KR); and Sang-Kuk Kim, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 8, 2021, as Appl. No. 17/169,759.
Application 17/169,759 is a continuation of application No. 16/837,424, filed on Apr. 1, 2020, granted, now 10,978,638.
Application 16/837,424 is a continuation of application No. 16/110,483, filed on Aug. 23, 2018, abandoned.
Application 16/110,483 is a continuation of application No. 15/606,136, filed on May 26, 2017, granted, now 10,115,893, issued on Oct. 30, 2018.
Claims priority of application No. 10-2016-0145368 (KR), filed on Nov. 2, 2016.
Prior Publication US 2021/0167283 A1, Jun. 3, 2021
Int. Cl. H10N 50/01 (2023.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/01 (2023.02) [H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
an insulating layer disposed on the substrate;
a contact plug disposed in the insulating layer;
a first magnetic pattern disposed on the contact plug;
a tunnel barrier pattern disposed on the first magnetic pattern; and
a second magnetic pattern disposed on the tunnel barrier pattern,
wherein a width of a bottom portion of the first magnetic pattern is greater than a width of a bottom portion of the second magnetic pattern,
a thickness of an edge portion of the tunnel barrier pattern is greater than a thickness of a center portion of the tunnel barrier pattern,
an edge part of a bottom surface of the tunnel barrier pattern is disposed lower than a center part of the bottom surface of the tunnel barrier pattern, and
an outermost side wall of the tunnel barrier pattern is sloped.