US 11,683,966 B2
Capacitor
Guang-Hai Jin, Yongin-si (KR); Jae-Beom Choi, Yongin-si (KR); Se-Hun Park, Yongin-si (KR); and Jae-Seol Cho, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Dec. 28, 2020, as Appl. No. 17/134,722.
Application 17/134,722 is a continuation of application No. 16/286,886, filed on Feb. 27, 2019, granted, now 10,879,336.
Application 16/286,886 is a continuation of application No. 15/060,682, filed on Mar. 4, 2016, granted, now 10,224,384, issued on Mar. 5, 2019.
Application 15/060,682 is a continuation of application No. 14/249,520, filed on Apr. 10, 2014, granted, now 9,281,418, issued on Mar. 8, 2016.
Claims priority of application No. 10-2013-0079283 (KR), filed on Jul. 5, 2013.
Prior Publication US 2021/0118975 A1, Apr. 22, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/32 (2006.01); H10K 59/131 (2023.01); H01L 29/94 (2006.01); H01L 29/66 (2006.01); H01L 49/02 (2006.01); H10K 59/121 (2023.01)
CPC H10K 59/131 (2023.02) [H01L 28/60 (2013.01); H01L 29/66181 (2013.01); H01L 29/94 (2013.01); H10K 59/1216 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A display, comprising:
an organic light emitting element; and
a pixel circuit configured to drive the organic light emitting element and including a capacitor,
wherein the capacitor includes:
an active layer;
a gate insulation layer on the active layer;
a gate electrode on the gate insulation layer;
an interlayer insulating layer on the gate electrode; and
a first electrode on the interlayer insulating layer, directly connected to the active layer through at least one contact hole through the interlayer insulating layer and the gate insulation layer, and overlapped with the gate electrode, wherein
a portion of the first electrode directly on the interlayer insulating layer extends to overlap the gate electrode, and
the capacitor comprises a storage capacitor in an area in which the portion of the first electrode overlaps the gate electrode, and
the capacitor further comprises a parasitic capacitor between the active layer and the gate electrode.